Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 葉清發 | en_US |
| dc.contributor.author | 陳添富 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:26Z | - |
| dc.date.available | 2014-12-16T06:17:26Z | - |
| dc.date.issued | 2004-09-01 | en_US |
| dc.identifier.govdoc | H01L029/786 | zh_TW |
| dc.identifier.govdoc | H01L029/786 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106428 | - |
| dc.description.abstract | 【發明摘要】 本發明係一種製作複晶矽薄膜電晶體之方法，係可改善複晶矽薄膜電晶體的電特性與可靠度，在傳統四道光罩製作薄膜電晶體之前，先做選擇性氧化矽薄膜，此技術除了可利用雷射側向再結晶來提高複晶矽薄膜電晶體的場效載子移動率之外，具厚源極(Thick Source)/汲極(Thick Drain)且薄通道(Thin Channel)結構更可降低靠近汲極(Drain)端的側向電場及通道的缺陷密度，因而可改善薄膜電晶體的可靠度。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 製作複晶矽薄膜電晶體之方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I220795 | zh_TW |
| Appears in Collections: | Patents | |
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