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dc.contributor.author葉清發en_US
dc.contributor.author陳添富en_US
dc.contributor.author羅正忠en_US
dc.date.accessioned2014-12-16T06:17:26Z-
dc.date.available2014-12-16T06:17:26Z-
dc.date.issued2004-06-21en_US
dc.identifier.govdocH01L021/324zh_TW
dc.identifier.govdocH01L021/324zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106431-
dc.description.abstract本發明係一種低溫多晶矽薄膜電晶體主動層之雷射再結晶方法,其係利用具單一方向性之乾式蝕刻在薄膜電晶體主動層側壁覆蓋一間距矽(poly–spacer),該間距矽(poly–spacer)提供了一雷射側向再結晶機制與可防止雷射再結晶後主動層微縮或剝落現象,可使通道內之矽晶粒變大但不需額外光罩,如此同時提升元件特性、提高元件均勻度與節省製程成本,此技術在現今低溫多晶矽薄膜電晶體(LTPS–TFTs)領域中將會是一項關鍵技術。zh_TW
dc.language.isozh_TWen_US
dc.title低溫多晶矽薄膜電晶體主動層之雷射再結晶方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber00594884zh_TW
Appears in Collections:Patents


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