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dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorTeng, Ya-Huien_US
dc.contributor.authorLin, Yi-Chenen_US
dc.contributor.authorJhong, Jhin-Cien_US
dc.contributor.authorYen, Ying-Chiehen_US
dc.date.accessioned2014-12-08T15:13:46Z-
dc.date.available2014-12-08T15:13:46Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0748-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/10644-
dc.description.abstractStacked transformers, coupling stacked transformers, interleave transformers and symmetrical transformers on GaAs substrate are systematically studied in this paper. Two kinds stacked transformer are under study. One has the symmetrical electric property while the other one has a better quality factor for the primary port. The stack transformers have achieved the highest coupling coefficient (similar to 0.9) at the cost of lower self-resonance frequency. The interleave transformers have the identical electric properties for the primary and the secondary ports. However, the layout is incompatible with the differential operation. On the other hand, the symmetrical transformer is compatible with the differential operation and can have the center-tapped biasing option. The data established here provide a useful design library for the GaAs RFIC.en_US
dc.language.isoen_USen_US
dc.subjectGaAsen_US
dc.subjecttransformeren_US
dc.subjectstack transformeren_US
dc.subjectinterleave transformer and symmetrical transformeren_US
dc.titleCharacteristics of Integrated RF Transformers on GaAs Substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5en_US
dc.citation.spage771en_US
dc.citation.epage774en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000261353300197-
Appears in Collections:Conferences Paper