Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張國明 | en_US |
| dc.contributor.author | 鐘元鴻 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:30Z | - |
| dc.date.available | 2014-12-16T06:17:30Z | - |
| dc.date.issued | 2003-06-21 | en_US |
| dc.identifier.govdoc | H01L027/01 | zh_TW |
| dc.identifier.govdoc | H01L027/01 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106463 | - |
| dc.description.abstract | 本案係為一種薄膜電晶體結構及其製造方法，其步驟包含提供一絕緣基板；於該絕緣基板上形成一源/汲極層、一主閘極絕緣層、以及一第一導體層；對該第一導體層進行蝕刻以定義出一主閘極導體結構；於該主閘極導體結構上依序形成一子閘極絕緣層及一第二導體層；以及對該第二導體層及該子閘極絕緣層進行蝕刻以定義出一第一子閘極導體結構、一第二子閘極導體結構、一第一子閘極絕緣層、以及一第二子閘極絕緣層。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 薄膜電晶體結構及其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 00538529 | zh_TW |
| Appears in Collections: | Patents | |
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