Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 劉柏村 | en_US |
| dc.contributor.author | 鄧立峯 | en_US |
| dc.contributor.author | 羅婉柔 | en_US |
| dc.contributor.author | 李耀仁 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:34Z | - |
| dc.date.available | 2014-12-16T06:17:34Z | - |
| dc.date.issued | 2014-10-01 | en_US |
| dc.identifier.govdoc | H01L021/336 | zh_TW |
| dc.identifier.govdoc | H01L021/28 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106495 | - |
| dc.description.abstract | 本發明提供一種半導體元件製造方法,用以增强一半導體元件之效能,上述製造方法至少包含下列步驟:首先,形成一閘極層於一基板上。接著,形成一閘極絕緣層於閘極層上,再形成一主動層於閘極絕緣層上。其中,上述主動層係由一微波吸收材料所組成。最後,定義一源/汲極於主動層上,並進行一微波退火程序,以形成半導體元件。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 半導體元件製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201438109 | zh_TW |
| Appears in Collections: | Patents | |
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