Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 劉柏村 | en_US |
| dc.contributor.author | 王薇雅 | en_US |
| dc.contributor.author | 鄧立峯 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:37Z | - |
| dc.date.available | 2014-12-16T06:17:37Z | - |
| dc.date.issued | 2014-07-16 | en_US |
| dc.identifier.govdoc | H01L021/3205 | zh_TW |
| dc.identifier.govdoc | H01L021/316 | zh_TW |
| dc.identifier.govdoc | H01L021/324 | zh_TW |
| dc.identifier.govdoc | H01L021/322 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106515 | - |
| dc.description.abstract | 本發明提供一種半導體元件製程,其至少包含下列步驟:首先,製備至少包含一閘極、一介電層、一主動層、一源極與一汲極之一半導體元件,其中半導體元件的結構具有複數個缺陷,且主動層為一金屬氧化物薄膜。接著,對半導體元件進行退火處理後,再將半導體元件置於一反應腔中進行反應。最後,通入載有修飾劑之一超臨界流體於反應腔中以使修飾劑修飾該些缺陷。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 一種半導體元件製程 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201428852 | zh_TW |
| Appears in Collections: | Patents | |
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