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dc.contributor.author邱俊誠en_US
dc.contributor.author張志瑋en_US
dc.contributor.author楊自森en_US
dc.date.accessioned2014-12-16T06:17:39Z-
dc.date.available2014-12-16T06:17:39Z-
dc.date.issued2014-07-01en_US
dc.identifier.govdocH01L027/04zh_TW
dc.identifier.govdocH01L023/52zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106524-
dc.description.abstract本發明提供一種整合被動元件之半導體裝置,應用於類比電路中,係利用穿孔技術,製作出電容、電阻及電感之被動元件。至少一被動元件設於基板中,被動元件包含依序層疊的第一導電層、第一介電層及第二導電層,該第一導電層與該第二導電層之間係透過該第一介電層以產生一等效元件,至少一半導體積體電路設於基板上,係透過第一導電層及第二導電層電性連接,據以形成雙向訊號導通路徑。被動元件可設於基板的背面,以解決被動元件佔據了有限的基板面積的問題。zh_TW
dc.language.isozh_TWen_US
dc.title整合被動元件之半導體裝置zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201426971zh_TW
Appears in Collections:Patents


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