Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張立 | en_US |
| dc.contributor.author | 吳秉勳 | en_US |
| dc.contributor.author | 丘坤安 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:42Z | - |
| dc.date.available | 2014-12-16T06:17:42Z | - |
| dc.date.issued | 2014-06-01 | en_US |
| dc.identifier.govdoc | C30B025/02 | zh_TW |
| dc.identifier.govdoc | C30B025/18 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106547 | - |
| dc.description.abstract | 一種鑽石磊晶成長方式，包含：提供一鑽石基板；沉積至少一金屬層於鑽石基板上，其中金屬層之金屬成分係滿足與鑽石晶格差異性小於15%以及溶碳率小於2 wt%兩種特性至少其中之一之金屬；通入一反應氣氛；以及沉積一鑽石磊晶層於鑽石基板與金屬層上。藉由先形成一金屬層結構，以紓解成長磊晶鑽石薄膜所產生的薄膜應力，避免薄膜產生裂痕。如此則可獲得具有足夠膜厚且品質良好之磊晶層。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 鑽石磊晶成長方式 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201420820 | zh_TW |
| Appears in Collections: | Patents | |
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