Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 劉柏村 | en_US |
| dc.contributor.author | 許沁卉 | en_US |
| dc.contributor.author | 范揚順 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:43Z | - |
| dc.date.available | 2014-12-16T06:17:43Z | - |
| dc.date.issued | 2014-05-16 | en_US |
| dc.identifier.govdoc | G11C013/00 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106553 | - |
| dc.description.abstract | 電阻式記憶體裝置及其操作方法在此揭露。電阻式記憶體裝置包括至少一個電阻式記憶體元件以及控制電路。電阻式記憶體元件包括底電極、非晶態氧化銦鎵鋅(amorphous Indium-Gallium-Zinc-Oxide,a-IGZO)層、鈦層以及頂電極。非晶態氧化銦鎵鋅層配置於底電極上。鈦層配置於非晶態氧化銦鎵鋅層。頂電極配置於鈦層上。控制電路用以提供電訊號給電阻式記憶體元件,以改變電阻式記憶體元件的電阻値。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 電阻式記憶體裝置及其操作方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201419279 | zh_TW |
| Appears in Collections: | Patents | |
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