Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 劉柏村 | en_US |
| dc.contributor.author | 范揚順 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:46Z | - |
| dc.date.available | 2014-12-16T06:17:46Z | - |
| dc.date.issued | 2014-03-16 | en_US |
| dc.identifier.govdoc | H01L021/8247 | zh_TW |
| dc.identifier.govdoc | H01L027/115 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106579 | - |
| dc.description.abstract | 一種可撓曲非揮發性記憶體之製造方法,包含:提供可撓曲基板;形成平坦層於可撓曲基板上;沉積金屬底電極層於平坦層上;形成光罩,以定義複數圖樣;對應圖樣沉積包含電性獨立之複數氧化鋁鋅錫電阻切換單元之氧化鋁鋅錫電阻切換層於該金屬底電極層上;以及對應氧化鋁鋅錫電阻切換單元沉積頂電極層於氧化鋁鋅錫電阻切換層上,俾形成複數非揮發性記憶體單元。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 可撓曲非揮發性記憶體及其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201411781 | zh_TW |
| Appears in Collections: | Patents | |
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