標題: The resistive switching characteristics of a Ti/Gd(2)O(3)/Pt RRAM device
作者: Liu, Kou-Chen
Tzeng, Wen-Hsien
Chang, Kow-Ming
Chan, Yi-Chun
Kuo, Chun-Chih
Cheng, Chun-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-2010
摘要: We successfully fabricated the Gd(2)O(3) film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd(2)O(3)/Pt capacitor structure could be both operated under positive or negative bias. However, there was a significant difference on the switching properties. The switching behavior under positive bias operation was more stable, had less voltage and resistance fluctuation, and had longer endurance than that of the negative one. We propose that the anode electrode plays an important role in the switching characteristics and may be the cause of the asymmetry of the I-V curves between positive and negative operation. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2010.02.006
http://hdl.handle.net/11536/10677
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2010.02.006
期刊: MICROELECTRONICS RELIABILITY
Volume: 50
Issue: 5
起始頁: 670
結束頁: 673
顯示於類別:會議論文