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dc.contributor.authorJian, Zhi-Anen_US
dc.contributor.authorLuo, Ying-Zien_US
dc.contributor.authorChung, Jia-Mingen_US
dc.contributor.authorTang, Shiow-Jingen_US
dc.contributor.authorKuo, Ming-Chinen_US
dc.contributor.authorShen, Ji-Linen_US
dc.contributor.authorChiu, Kuan-Chengen_US
dc.contributor.authorYang, Chu-Shouen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorDai, Chung-Fengen_US
dc.contributor.authorYeh, Jui-Mingen_US
dc.date.accessioned2014-12-08T15:13:50Z-
dc.date.available2014-12-08T15:13:50Z-
dc.date.issued2007-06-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2749209en_US
dc.identifier.urihttp://hdl.handle.net/11536/10685-
dc.description.abstractOrganic tris(8-hydroxyquinoline)aluminum (Alq3) amorphous layers are prepared by vacuum deposition at various substrate temperatures T-sub from 30 to 180 degrees C. The surface morphology and electrical characteristics of these as-deposited layers are studied by atomic force microscopy and current-density versus electric-field (J-E) curves. The temperature dependence of the dark electrical conductivity sigma(T) determined from J-E curves is also examined. These experimental results reveal that the surface and electrical properties of Alq3 amorphous layers deposited at T-sub between 90 and 120 degrees C exhibit an anomalous T-sub dependence. However, this anomalous T-sub dependence is not observed from infrared absorption measurements, and therefore is not the result of chemical degradation. The observed behavior is explained in terms of the property that the vacuum deposition of Alq3 with T-sub between 90 and 120 degrees C involves a thermal interconversion between meridional and facial Alq3 isomers. (c) x 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleEffects of isomeric transformation on characteristics of Alq3 amorphous layers prepared by vacuum deposition at various substrate temperaturesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2749209en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume101en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000247625700068-
dc.citation.woscount9-
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