AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser

doi:10.1364/OL.32.001480

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, S. C.	en_US
dc.contributor.author	Liu, S. C.	en_US
dc.contributor.author	Li, A.	en_US
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.date.accessioned	2014-12-08T15:13:55Z	-
dc.date.available	2014-12-08T15:13:55Z	-
dc.date.issued	2007-06-01	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.32.001480	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10735	-
dc.description.abstract	We demonstrate what is believed to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q switching of a high-power diode-pumped Nd-doped 1.06 mu m laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump power of 13.5 W, an average output power of 3.5 W with a Q-switched pulse width of 0.9 ns at a pulse repetition rate of 110 kHz was obtained. (c) 2007 Optical Society of America.	en_US
dc.language.iso	en_US	en_US
dc.title	AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.32.001480	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	32	en_US
dc.citation.issue	11	en_US
dc.citation.spage	1480	en_US
dc.citation.epage	1482	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000247756600045	-
dc.citation.woscount	12	-
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