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dc.contributor.authorWang, Yi-Chaoen_US
dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2014-12-08T15:14:01Z-
dc.date.available2014-12-08T15:14:01Z-
dc.date.issued2007-05-28en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.15.006982en_US
dc.identifier.urihttp://hdl.handle.net/11536/10784-
dc.description.abstractPolycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions. (C) 2006 Optical Society of America.en_US
dc.language.isoen_USen_US
dc.titleNear-infrared femtosecond laser crystallized poly-Si thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.15.006982en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume15en_US
dc.citation.issue11en_US
dc.citation.spage6982en_US
dc.citation.epage6987en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000247240300053-
dc.citation.woscount4-
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