High Light-Extraction GaN-based Vertical LEDs With Double Diffuse Surfaces

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DC Field	Value	Language
dc.contributor.author	Lee, Y. J.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.date.accessioned	2014-12-08T15:14:01Z	-
dc.date.available	2014-12-08T15:14:01Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-3590-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10789	-
dc.description.abstract	High light-extraction (external quantum efficiency similar to 40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power. (C)2006 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	High Light-Extraction GaN-based Vertical LEDs With Double Diffuse Surfaces	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5	en_US
dc.citation.spage	542	en_US
dc.citation.epage	543	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000268751000273	-
Appears in Collections:	Conferences Paper