標題: | Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates |
作者: | Horng, Ray-Hua Wu, Bing-Rui Tien, Ching-Ho Ou, Sin-Liang Yang, Min-Hao Kuo, Hao-Chung Wuu, Dong-Sing 光電工程學系 Department of Photonics |
公開日期: | 13-一月-2014 |
摘要: | Light extraction of GaN-based light-emitting diodes grown on Si(111) substrate (GaN-on-Si based LEDs) is presented in this study. Three different designs of GaN-on-Si based LEDs with the lateral structure, lateral structure on mirror/Si(100) substrate, and vertical structure on mirror/Si(100) substrate were epitaxially grown by metalorganic chemical vapor deposition and fabricated using chemical lift-off and double-transfer techniques. Current-voltage, light output power, far-field radiation patterns, and electroluminescence characteristics of these three LEDs were discussed. At an injection current of 700 mA, the output powers of LEDs with the lateral structure on mirror/Si(100) substrate and vertical structure on mirror/Si(100) substrate were measured to be 155.07 and 261.07 mW, respectively. The output powers of these two LEDs had 70.63% and 187.26% enhancement compared to that of LED with the lateral structure, respectively. The result indicated this vertical structure LED was useful in improving the light extraction due to an enhancement in light scattering efficiency while the high-reflection mirror and diffuse surfaces were employed. (C) 2014 Optical Society of America |
URI: | http://dx.doi.org/10.1364/OE.22.00A179 http://hdl.handle.net/11536/23840 |
ISSN: | 1094-4087 |
DOI: | 10.1364/OE.22.00A179 |
期刊: | OPTICS EXPRESS |
Volume: | 22 |
Issue: | 1 |
起始頁: | A179 |
結束頁: | A187 |
顯示於類別: | 期刊論文 |