High Light-Extraction GaN-based Vertical LEDs With Double Diffuse Surfaces

Title:	High Light-Extraction GaN-based Vertical LEDs With Double Diffuse Surfaces
Authors:	Lee, Y. J. Kuo, H. C. Lu, T. C. Wang, S. C. 光電工程學系 Department of Photonics
Issue Date:	2007
Abstract:	High light-extraction (external quantum efficiency similar to 40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power. (C)2006 Optical Society of America
URI:	http://hdl.handle.net/11536/10789
ISBN:	978-1-4244-3590-6
Journal:	2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5
Begin Page:	542
End Page:	543
Appears in Collections:	Conferences Paper