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dc.contributor.authorLee, Yi-Chingen_US
dc.contributor.authorTarng, Jenn-Hwanen_US
dc.date.accessioned2014-12-08T15:14:02Z-
dc.date.available2014-12-08T15:14:02Z-
dc.date.issued2007-05-10en_US
dc.identifier.issn1349-2543en_US
dc.identifier.urihttp://dx.doi.org/10.1587/elex.4.294en_US
dc.identifier.urihttp://hdl.handle.net/11536/10802-
dc.description.abstractIn this paper, a low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed. Here, we propose a structure to combine the common gate with band pass filters, which can reduce parasitic capacitance of the transistor and to achieve input wideband matching. The pi-section LC network technique is employed in the LNA to achieve sufficient. at gain. A bias resistor of large value is placed between the source and the body nodes to prevent body effect and reduce noise. Numerical simulation based on TSMC 0.18 mu m 1P6M process. It achieved 10.0 similar to 12.4 dB gain from 3 GHz to 10.6 GHz and 3.25 dB noise figure in 8.5 GHz, operates from 1.5 V power supply, and dissipates 3 mW without the output buffer.en_US
dc.language.isoen_USen_US
dc.subjectlow noise amplifieren_US
dc.subjectlow poweren_US
dc.subjectultra-widebanden_US
dc.titleA low-power CMOS LNA for ultra-wideband wireless receiversen_US
dc.typeArticleen_US
dc.identifier.doi10.1587/elex.4.294en_US
dc.identifier.journalIEICE ELECTRONICS EXPRESSen_US
dc.citation.volume4en_US
dc.citation.issue9en_US
dc.citation.spage294en_US
dc.citation.epage299en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000247028000004-
dc.citation.woscount3-
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