Ka-band 0.18 mu m CMOS low noise amplifier with 5.2 dB noise figure

Abstract

A Ka-band low noise amplifier (LNA) using three cascaded stages was designed and implemented in a standard 0.18 Pun CMOS technology. The fabricated Ka-band LNA achieves power gain (S21) above 12 dB from 30 to 32 GHz and a minimal noise figure of 5.2 dB at 31.5 GHz. The three cascaded stages LNA consume 15.58 mA from I V power supply. Compared with the recent published literatures, this LNA operates at the highest frequency ever reported by standard bulk 0.18 mu m CMOS process. (c) 2007 Wiley Periodicals, Inc.