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dc.contributor.authorLiang, H. C.en_US
dc.contributor.authorHuang, J. Y.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorLai, H. C.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorHuang, K. F.en_US
dc.contributor.authorZhang, H. J.en_US
dc.contributor.authorWang, J. Y.en_US
dc.contributor.authorJiang, M. H.en_US
dc.date.accessioned2014-12-08T15:14:14Z-
dc.date.available2014-12-08T15:14:14Z-
dc.date.issued2007-04-20en_US
dc.identifier.issn0003-6935en_US
dc.identifier.urihttp://dx.doi.org/10.1364/AO.46.002292en_US
dc.identifier.urihttp://hdl.handle.net/11536/10889-
dc.description.abstractA diode-pumped Yb:YCOB laser at 1086 nm is passively Q switched by using InGaAs quantum wells as saturable absorbers and utilizing the Bragg mirror structure as an output coupler. With an absorbed pump power of 9.2 W the laser produces pulses of 100 ms duration with average pulse energy of as much as 165 mu J at a pulse repetition rate of 7 kHz. (c) 2007 Optical Society of America.en_US
dc.language.isoen_USen_US
dc.titlePassively Q-switched Yb3+: YCa4O(BO3)(3) laser with InGaAs quantum wells as saturable absorbersen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/AO.46.002292en_US
dc.identifier.journalAPPLIED OPTICSen_US
dc.citation.volume46en_US
dc.citation.issue12en_US
dc.citation.spage2292en_US
dc.citation.epage2296en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000245764000017-
dc.citation.woscount8-
Appears in Collections:Articles


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