Passively Q-switched Yb3+: YCa4O(BO3)(3) laser with InGaAs quantum wells as saturable absorbers

doi:10.1364/AO.46.002292

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liang, H. C.	en_US
dc.contributor.author	Huang, J. Y.	en_US
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Lai, H. C.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.contributor.author	Zhang, H. J.	en_US
dc.contributor.author	Wang, J. Y.	en_US
dc.contributor.author	Jiang, M. H.	en_US
dc.date.accessioned	2014-12-08T15:14:14Z	-
dc.date.available	2014-12-08T15:14:14Z	-
dc.date.issued	2007-04-20	en_US
dc.identifier.issn	0003-6935	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/AO.46.002292	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10889	-
dc.description.abstract	A diode-pumped Yb:YCOB laser at 1086 nm is passively Q switched by using InGaAs quantum wells as saturable absorbers and utilizing the Bragg mirror structure as an output coupler. With an absorbed pump power of 9.2 W the laser produces pulses of 100 ms duration with average pulse energy of as much as 165 mu J at a pulse repetition rate of 7 kHz. (c) 2007 Optical Society of America.	en_US
dc.language.iso	en_US	en_US
dc.title	Passively Q-switched Yb3+: YCa4O(BO3)(3) laser with InGaAs quantum wells as saturable absorbers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/AO.46.002292	en_US
dc.identifier.journal	APPLIED OPTICS	en_US
dc.citation.volume	46	en_US
dc.citation.issue	12	en_US
dc.citation.spage	2292	en_US
dc.citation.epage	2296	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000245764000017	-
dc.citation.woscount	8	-
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