A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current

doi:10.1109/3.535363

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yen, ST	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:02:24Z	-
dc.date.available	2014-12-08T15:02:24Z	-
dc.date.issued	1996-09-01	en_US
dc.identifier.issn	0018-9197	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/3.535363	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1089	-
dc.description.abstract	A novel cladding structure is proposed and analyzed for semiconductor quantum-well lasers ttl achieve a small vertical-beam divergence and a low threshold current density simultaneously, This cladding structure is designed to guide a wide optical mode but with a high peak intensity in quantum wells. The wide expansion of the optical mode results in a small beam divergence. In addition, the high optical intensity in quantum wells causes a low threshold current density, This novel cladding structure is optimized. The result shows that this type of cladding structures can achieve a beam divergence as small as 14.6 degrees while the threshold current density remains small.	en_US
dc.language.iso	en_US	en_US
dc.title	A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/3.535363	en_US
dc.identifier.journal	IEEE JOURNAL OF QUANTUM ELECTRONICS	en_US
dc.citation.volume	32	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1588	en_US
dc.citation.epage	1595	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
顯示於類別：	期刊論文

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