標題: | Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure |
作者: | Lin, G Yen, ST Lee, CP Liu, DC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-十二月-1996 |
摘要: | We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-mu m-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13 degrees and a lateral far-field angle of 8 degrees. Meanwhile, the threshold current remains acceptably low (approximate to 36 mA for a 500-mu m-long cavity), The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser. |
URI: | http://dx.doi.org/10.1109/68.544686 http://hdl.handle.net/11536/877 |
ISSN: | 1041-1135 |
DOI: | 10.1109/68.544686 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 8 |
Issue: | 12 |
起始頁: | 1588 |
結束頁: | 1590 |
顯示於類別: | 期刊論文 |