Thermomigration in flip-chip SnPb solder joints under alternating current stressing

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DC 欄位	值	語言
dc.contributor.author	Hsiao, Hsiang-Yao	en_US
dc.contributor.author	Chen, Chih	en_US
dc.date.accessioned	2014-12-08T15:14:17Z	-
dc.date.available	2014-12-08T15:14:17Z	-
dc.date.issued	2007-04-09	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2721136	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10920	-
dc.description.abstract	Thermomigration in flip-chip solder joints is investigated using alternating currents and infrared microscopy to decouple it from electromigration effect. It is found that the thermal gradient in solder bump can be as high as 2143 degrees C/cm when 9.2x10(4) A/cm(2) was applied at 100 degrees C. Markers fabricated by focus ion beam are employed to measure the thermomigration rate. The thermomigration flux is measured to be 3.3x10(13) at./cm(2). With the known thermal gradient, the molar heat of 26.8 kJ/mole has been obtained for the transport of Pb. (c) 2007 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Thermomigration in flip-chip SnPb solder joints under alternating current stressing	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2721136	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	90	en_US
dc.citation.issue	15	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000245690700055	-
dc.citation.woscount	31	-
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