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dc.contributor.authorWu, T. H.en_US
dc.contributor.authorKuo, P. C.en_US
dc.contributor.authorFang, Yen-Hsiangen_US
dc.contributor.authorChen, Jung-Poen_US
dc.contributor.authorYen, Po-Fuen_US
dc.contributor.authorJeng, Tzuan-Renen_US
dc.contributor.authorWu, Chih-Yuanen_US
dc.contributor.authorHuang, Der-Rayen_US
dc.date.accessioned2014-12-08T15:14:17Z-
dc.date.available2014-12-08T15:14:17Z-
dc.date.issued2007-04-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2721844en_US
dc.identifier.urihttp://hdl.handle.net/11536/10924-
dc.description.abstractThe recording mechanism of Ge/Au bilayer and its dynamic tests for write-once blue laser high density DVD (HD DVD) are investigated. It is found that Ge2Au3 phase is nucleated between amorphous Ge and crystalline Au layer after room temperature deposition. Crystallization of Ge/Au interface layer at 170-190 degrees C is induced by the nucleated Ge2Au3 sites at the interface, the bilayer structure is further heated to 200-450 degrees C. After heating above 320 degrees C, crystallized Ge are segregated at the grain boundary. The dynamic test results show that this Ge/Au bilayer films can be applied to 1x-2x HD DVD-R. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleMicrostructure and recording mechanism of Ge/Au bilayer media for write-once optical discen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2721844en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue15en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000245690700011-
dc.citation.woscount7-
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