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dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorFan, W. C.en_US
dc.contributor.authorYang, S. L.en_US
dc.contributor.authorChuu, D. S.en_US
dc.contributor.authorChou, W. C.en_US
dc.date.accessioned2014-12-08T15:14:25Z-
dc.date.available2014-12-08T15:14:25Z-
dc.date.issued2007-04-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2719287en_US
dc.identifier.urihttp://hdl.handle.net/11536/10986-
dc.description.abstractRaman and photoluminescence spectra of cubic Zn1-xCdxSe (0 <= x <= 0.32) epilayers were obtained at high pressure. The impurity mode I observed in the phonon Raman spectra at low temperature confirms the intermediate phonon mode behavior. A split transverse optical phonon mode was found in the down-stroke high-pressure Raman scattering. Additionally, the pressure-dependent longitudinal optical (LO) phonon frequencies and the Gruneisen parameter (gamma(LO)) were obtained by quadratic polynomial fitting. Pressure-driven resonant Raman scattering effect was observed in samples with a high Cd concentration (x >= 0.18). The critical pressure of semiconductor-to-metal phase transition (Pt) decreases as the Cd content increases. As the Cd concentration increases from 0 to 0.32, Pt falls from 13.6 to 9.4 GPa, according to Pt (GPa)=13.6-6.8x-20.3x(2). (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titlePressure-dependent Raman scattering and photoluminescence of Zn1-xCdxSe epilayersen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2719287en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume101en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000245691000027-
dc.citation.woscount3-
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