標題: Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxide
作者: Yang, F. M.
Chang, T. C.
Liu, P. T.
Yeh, P. H.
Yu, Y. C.
Lin, J. Y.
Sze, S. M.
Lou, J. C.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 26-三月-2007
摘要: In this letter, the Co nanocrystals using SiO(2) and HfO(2) as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2716845
http://hdl.handle.net/11536/11004
ISSN: 0003-6951
DOI: 10.1063/1.2716845
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 13
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顯示於類別:期刊論文