標題: | Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxide |
作者: | Yang, F. M. Chang, T. C. Liu, P. T. Yeh, P. H. Yu, Y. C. Lin, J. Y. Sze, S. M. Lou, J. C. 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
公開日期: | 26-三月-2007 |
摘要: | In this letter, the Co nanocrystals using SiO(2) and HfO(2) as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. (c) 2007 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2716845 http://hdl.handle.net/11536/11004 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2716845 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 90 |
Issue: | 13 |
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顯示於類別: | 期刊論文 |