標題: | High-perfomance nonvolatile HfO2 nanocrystal memory |
作者: | Lin, YH Chien, CH Lin, CT Chang, CY Lei, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | hafnium oxide;nanocrystals;nonvolatile memories;phase separation |
公開日期: | 1-三月-2005 |
摘要: | In this letter, we demonstrate high-performance nonvolatile HfO2 nanocrystal memory utilizing spinodal phase separation of Hf-silicate thin film by 900 degreesC rapid thermal annealing. With this technique. a remarkably high nanocrystal density of as high as 0.9 similar to 1.9 X 10(12) cm(-2) with an average size < 10 nm can be easily achieved. Because HfO2 nanocrystals are well embedded inside an SiO2-rich matrix and due to their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memories in terms of a considerably large memory window, high-speed program/erase (P/E) (1 mus/0.1 ms), long retention time greater than 10(8) s for 10 % charge loss, and excellent endurance after 10(6) P/E cycles. |
URI: | http://dx.doi.org/10.1109/LED.2004.842727 http://hdl.handle.net/11536/13955 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2004.842727 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 26 |
Issue: | 3 |
起始頁: | 154 |
結束頁: | 156 |
顯示於類別: | 期刊論文 |