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dc.contributor.authorChen, Bo-Tingen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorWei, Ying-Jyunen_US
dc.contributor.authorWei, Kai-Fangen_US
dc.contributor.authorTsai, Chun-Chienen_US
dc.contributor.authorHuang, Chun-Yaoen_US
dc.contributor.authorKuo, Yu-Juen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:14:31Z-
dc.date.available2014-12-08T15:14:31Z-
dc.date.issued2007-03-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2006.12.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/11050-
dc.description.abstractA new source follower circuit using low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs) as analog buffer for the integrated data driver circuit of active matrix liquid crystal displays (AMLCDs) and active matrix light emitting diodes (AMOLEDs) is proposed and measured. Threshold voltage compensation circuit with two n-type thin film transistors, a capacitor, and four switches structure is used to enhance image quality for the display. The threshold voltage difference of driving TFTs and the unsaturated of output voltage are eliminated in this circuit. An active load is added and a calibration operation is applied to study the effects on the source follower circuit, the transistor operation mode region is also discussed. The proposed circuit is capable of minimizing the variation from both the signal timing and the device characteristics through the simulation and measured results. (C) 2007 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectsource followeren_US
dc.subjectLTPS-TFTs (low-temperature polycrystalline silicon thin film transistors)en_US
dc.subjectAMLCDs (active matrix liquid crystal displays)en_US
dc.subjectAMOLEDs (active matrix light emitting diodes)en_US
dc.titleInvestigation of source-follower type analog buffer using low temperature poly-Si TFTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2006.12.007en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume51en_US
dc.citation.issue3en_US
dc.citation.spage354en_US
dc.citation.epage359en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000246313400003-
dc.citation.woscount1-
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