完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiang, K. C. | en_US |
dc.contributor.author | Cheng, C. H. | en_US |
dc.contributor.author | Pan, H. C. | en_US |
dc.contributor.author | Hsiao, N. | en_US |
dc.contributor.author | Chou, C. P. | en_US |
dc.contributor.author | Chin, Albert | en_US |
dc.contributor.author | Hwang, H. L. | en_US |
dc.date.accessioned | 2014-12-08T15:14:34Z | - |
dc.date.available | 2014-12-08T15:14:34Z | - |
dc.date.issued | 2007-03-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2007.891265 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11074 | - |
dc.description.abstract | Using low-cost and high work-function Ni, a low leakage current of 5 x 10(-6) A/cm(2) at 125 degrees C is obtained in a high 25-fF/mu m(2)-density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 degrees C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall k value beyond previous laminate structure. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | capacitor | en_US |
dc.subject | high temperature | en_US |
dc.subject | metal-insulator-metal (MIM) | en_US |
dc.subject | Ni | en_US |
dc.subject | thermal leakage | en_US |
dc.title | High-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuning | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2007.891265 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 28 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 235 | en_US |
dc.citation.epage | 237 | en_US |
dc.contributor.department | 機械工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Mechanical Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000245184700016 | - |
dc.citation.woscount | 37 | - |
顯示於類別: | 期刊論文 |