Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors

標題:	Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors
作者:	Chiang, K. C. Cheng, C. H. Jhou, K. Y. Pan, H. C. Hsiao, C. N. Chou, C. P. McAlister, S. P. Chin, Albert Hwang, H. L. 機械工程學系電子工程學系及電子研究所 Department of Mechanical Engineering Department of Electronics Engineering and Institute of Electronics
關鍵字:	high work function;metal-insulator-metal (MIM);Ni;reliability;SrTiO3 (STO)
公開日期:	1-Aug-2007
摘要:	We have studied the stress reliability of low-energy-bandgap high-kappa. SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation (Delta C/C), the quadratic voltage coefficient of capacitance (VCC-alpha), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.
URI:	http://dx.doi.org/10.1109/LED.2007.900876 http://hdl.handle.net/11536/10488
ISSN:	0741-3106
DOI:	10.1109/LED.2007.900876
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	28
Issue:	8
起始頁:	694
結束頁:	696
Appears in Collections:	Articles

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