標題: High-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuning
作者: Chiang, K. C.
Cheng, C. H.
Pan, H. C.
Hsiao, N.
Chou, C. P.
Chin, Albert
Hwang, H. L.
機械工程學系
電子工程學系及電子研究所
Department of Mechanical Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: capacitor;high temperature;metal-insulator-metal (MIM);Ni;thermal leakage
公開日期: 1-三月-2007
摘要: Using low-cost and high work-function Ni, a low leakage current of 5 x 10(-6) A/cm(2) at 125 degrees C is obtained in a high 25-fF/mu m(2)-density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 degrees C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall k value beyond previous laminate structure.
URI: http://dx.doi.org/10.1109/LED.2007.891265
http://hdl.handle.net/11536/11074
ISSN: 0741-3106
DOI: 10.1109/LED.2007.891265
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 3
起始頁: 235
結束頁: 237
顯示於類別:期刊論文


文件中的檔案:

  1. 000245184700016.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。