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dc.contributor.authorChiang, K. C.en_US
dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorPan, H. C.en_US
dc.contributor.authorHsiao, N.en_US
dc.contributor.authorChou, C. P.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorHwang, H. L.en_US
dc.date.accessioned2014-12-08T15:14:34Z-
dc.date.available2014-12-08T15:14:34Z-
dc.date.issued2007-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2007.891265en_US
dc.identifier.urihttp://hdl.handle.net/11536/11074-
dc.description.abstractUsing low-cost and high work-function Ni, a low leakage current of 5 x 10(-6) A/cm(2) at 125 degrees C is obtained in a high 25-fF/mu m(2)-density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 degrees C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall k value beyond previous laminate structure.en_US
dc.language.isoen_USen_US
dc.subjectcapacitoren_US
dc.subjecthigh temperatureen_US
dc.subjectmetal-insulator-metal (MIM)en_US
dc.subjectNien_US
dc.subjectthermal leakageen_US
dc.titleHigh-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuningen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2007.891265en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume28en_US
dc.citation.issue3en_US
dc.citation.spage235en_US
dc.citation.epage237en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000245184700016-
dc.citation.woscount37-
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