Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors

doi:10.1109/LED.2007.900876

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DC 欄位	值	語言
dc.contributor.author	Chiang, K. C.	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Jhou, K. Y.	en_US
dc.contributor.author	Pan, H. C.	en_US
dc.contributor.author	Hsiao, C. N.	en_US
dc.contributor.author	Chou, C. P.	en_US
dc.contributor.author	McAlister, S. P.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Hwang, H. L.	en_US
dc.date.accessioned	2014-12-08T15:13:35Z	-
dc.date.available	2014-12-08T15:13:35Z	-
dc.date.issued	2007-08-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2007.900876	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10488	-
dc.description.abstract	We have studied the stress reliability of low-energy-bandgap high-kappa. SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation (Delta C/C), the quadratic voltage coefficient of capacitance (VCC-alpha), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.	en_US
dc.language.iso	en_US	en_US
dc.subject	high work function	en_US
dc.subject	metal-insulator-metal (MIM)	en_US
dc.subject	Ni	en_US
dc.subject	reliability	en_US
dc.subject	SrTiO3 (STO)	en_US
dc.title	Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2007.900876	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	8	en_US
dc.citation.spage	694	en_US
dc.citation.epage	696	en_US
dc.contributor.department	機械工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Mechanical Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000248315400009	-
dc.citation.woscount	20	-
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