標題: Stability of continuous-wave laser-crystallized epilike silicon transistors
作者: Lin, Yu-Ting
Chen, Chih
Shieh, Jia-Min
Pan, Ci-Ling
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
公開日期: 12-二月-2007
摘要: Stability of high-hole-mobility thin-film transistors (TFTs) on single-grainlike silicon channels formed by continuous-wave laser crystallization during hot-carrier stressing (HCS) was studied. As channel layers become thicker, laser-mediated channel crystallinity increases, increasing channel roughness. On such epilike polycrystalline silicon substrates, the poorer interface quality for thicker channels, even those with lower tail-state densities of grain traps, is responsible for the extensive charge trapping and creation of deep-state densities in the fabricated TFTs due to HCS. Hence, on a thin channel with a thickness of 50 nm and ultrasmooth surfaces, HCS hardly degrades the electrical parameters of the devices. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2644927
http://hdl.handle.net/11536/11134
ISSN: 0003-6951
DOI: 10.1063/1.2644927
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 7
結束頁: 
顯示於類別:期刊論文


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