標題: | Stability of continuous-wave laser-crystallized epilike silicon transistors |
作者: | Lin, Yu-Ting Chen, Chih Shieh, Jia-Min Pan, Ci-Ling 材料科學與工程學系 光電工程學系 Department of Materials Science and Engineering Department of Photonics |
公開日期: | 12-二月-2007 |
摘要: | Stability of high-hole-mobility thin-film transistors (TFTs) on single-grainlike silicon channels formed by continuous-wave laser crystallization during hot-carrier stressing (HCS) was studied. As channel layers become thicker, laser-mediated channel crystallinity increases, increasing channel roughness. On such epilike polycrystalline silicon substrates, the poorer interface quality for thicker channels, even those with lower tail-state densities of grain traps, is responsible for the extensive charge trapping and creation of deep-state densities in the fabricated TFTs due to HCS. Hence, on a thin channel with a thickness of 50 nm and ultrasmooth surfaces, HCS hardly degrades the electrical parameters of the devices. (c) 2007 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2644927 http://hdl.handle.net/11536/11134 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2644927 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 90 |
Issue: | 7 |
結束頁: | |
顯示於類別: | 期刊論文 |