完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, W. J. | en_US |
dc.contributor.author | Hsieh, C. C. | en_US |
dc.contributor.author | Chung, T. Y. | en_US |
dc.contributor.author | Hsu, S. Y. | en_US |
dc.contributor.author | Wu, K. H. | en_US |
dc.contributor.author | Uen, T. M. | en_US |
dc.contributor.author | Lin, J. -Y. | en_US |
dc.contributor.author | Lin, J. J. | en_US |
dc.contributor.author | Hsu, C. -H. | en_US |
dc.contributor.author | Kuo, Y. K. | en_US |
dc.contributor.author | Liu, H. L. | en_US |
dc.contributor.author | Hsu, M. H. | en_US |
dc.contributor.author | Gou, Y. S. | en_US |
dc.contributor.author | Juang, J. Y. | en_US |
dc.date.accessioned | 2014-12-08T15:14:42Z | - |
dc.date.available | 2014-12-08T15:14:42Z | - |
dc.date.issued | 2007-02-05 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2437131 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11139 | - |
dc.description.abstract | The authors have fabricated NaxCoO2 thin films via lateral diffusion of sodium into Co3O4 (111) epitaxial films (reactive solid-phase epitaxy [Ohta , Cryst. Growth Des. 5, 25 (2005)]). The environment of thermal diffusion is key to the control of the sodium content in thin films. From the results of x-ray diffraction and in-plane rho(ab), the epitaxial growth and the sodium contents of these films were identified. The thermoelectric measurements show a large thermoelectric power similar to that observed in single crystals. The quasiparticle scattering rate is found to approach zero at low temperatures, consistent with the small residual resistivity, indicating high quality of the NaxCoO2 thin films. (c) 2007 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Fabrication and low temperature thermoelectric properties of NaxCoO2 (x=0.68 and 0.75) epitaxial films by the reactive solid-phase epitaxy | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2437131 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 90 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000244162300034 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |