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dc.contributor.authorChang, W. J.en_US
dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorChung, T. Y.en_US
dc.contributor.authorHsu, S. Y.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorLin, J. J.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorKuo, Y. K.en_US
dc.contributor.authorLiu, H. L.en_US
dc.contributor.authorHsu, M. H.en_US
dc.contributor.authorGou, Y. S.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2014-12-08T15:14:42Z-
dc.date.available2014-12-08T15:14:42Z-
dc.date.issued2007-02-05en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2437131en_US
dc.identifier.urihttp://hdl.handle.net/11536/11139-
dc.description.abstractThe authors have fabricated NaxCoO2 thin films via lateral diffusion of sodium into Co3O4 (111) epitaxial films (reactive solid-phase epitaxy [Ohta , Cryst. Growth Des. 5, 25 (2005)]). The environment of thermal diffusion is key to the control of the sodium content in thin films. From the results of x-ray diffraction and in-plane rho(ab), the epitaxial growth and the sodium contents of these films were identified. The thermoelectric measurements show a large thermoelectric power similar to that observed in single crystals. The quasiparticle scattering rate is found to approach zero at low temperatures, consistent with the small residual resistivity, indicating high quality of the NaxCoO2 thin films. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleFabrication and low temperature thermoelectric properties of NaxCoO2 (x=0.68 and 0.75) epitaxial films by the reactive solid-phase epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2437131en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000244162300034-
dc.citation.woscount7-
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