完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiang, S. W.en_US
dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:14:47Z-
dc.date.available2014-12-08T15:14:47Z-
dc.date.issued2007-02-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-006-0060-xen_US
dc.identifier.urihttp://hdl.handle.net/11536/11170-
dc.description.abstractIn flip-chip solder joints, thick Cu and Ni films have been used as under bump metallization (UBM) for Pb-free solders. In addition, electromigration has become a crucial reliability concern for fine-pitch flip-chip solder joints. In this paper, the three-dimensional (3-D) finite element method was employed to simulate the current-density and temperature distributions for the eutectic SnPb solder joints with 5-mu m Cu, 10-mu m Cu, 25-mu m Cu, and 25-mu m Ni UBMs. It was found that the thicker the UBM is the lower the maximum current density inside the solder. The maximum current density is 4.37 x 10(4) A/cm(2), 1.69 x 10(4) A/cm(2), 7.54 x 10(3) A/cm(2), and 1.34 x 10(4) A/cm(2), respectively, when the solder joints with the above four UBMs are stressed by 0.567 A. The solder joints with thick UBMs can effectively relieve the current crowding effect inside the solder. In addition, the joint with the thicker Cu UBM has a lower Joule heating effect in the solder. The joint with the 25-mu m Ni UBM has the highest Joule heating effect among the four models.en_US
dc.language.isoen_USen_US
dc.subjectflip chip solder jointen_US
dc.subjectunder bump metallizationen_US
dc.subjectelectromigrationen_US
dc.subjectsimulationen_US
dc.titleThree-dimensional thermoelectrical simulation in flip-chip solder joints with thick underbump metallizations during accelerated electromigration testingen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-006-0060-xen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume36en_US
dc.citation.issue2en_US
dc.citation.spage159en_US
dc.citation.epage167en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000244727800009-
dc.citation.woscount10-
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