A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT

Abstract

This letter reports, for the first time, a high-electron mobility. transistor (HEMT) using A dilute antimony In0.2Ga0.8AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance g(m,max) of 227 (180) mS/mm, a drain saturation current density I-DSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency f(T) of 25 (20.6) GHz, and the maximum oscillation frequency f(max) of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2 x 200 mu m(2).