標題: | Investigations on highly stable thermal characteristics of a dilute In(0.2)Ga(0.8)AsSb/GaAs doped-channel field-effect transistor |
作者: | Su, Ke-Hua Hsu, Wei-Chou Lee, Ching-Sung Hu, Po-Jung Wu, Yue-Han Chang, Li Hsiao, Ru-Shang Chen, Jenn-Fang Chi, Tung-Wei 材料科學與工程學系 電子物理學系 Department of Materials Science and Engineering Department of Electrophysics |
公開日期: | 1-四月-2008 |
摘要: | This work reports for the first time a novel In(0.2)Ga(0.8)AsSb/GaAs heterostructure doped-channel field-effect transistor (DCFET) grown by the molecular beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the DCFET device has been effectively improved by introducing surfactant-like Sb atoms during the growth of the Si-doped InGaAs channel layer. The improved device characteristics include the peak extrinsic transconductance (g(m, max)) of 161.5 mS mm(-1), the peak drain-source saturation current density (IDSS, max) of 230 mA mm(-1), the gate-voltage swing (GVS) of 1.65 V, the cutoff frequency (f(T)) of 12.5 GHz and the maximum oscillation frequency (f(max)) of 25 GHz at 300 K with the gate dimensions of 1.2 x 200 mu m(2). The proposed design has also shown a stable thermal threshold coefficient (partial derivative V(th)/partial derivative T) of -0.7 mV K(-1). |
URI: | http://dx.doi.org/10.1088/0268-1242/23/4/045012 http://hdl.handle.net/11536/9539 |
ISSN: | 0268-1242 |
DOI: | 10.1088/0268-1242/23/4/045012 |
期刊: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
Volume: | 23 |
Issue: | 4 |
結束頁: | |
顯示於類別: | 期刊論文 |