標題: Optimum power-saving method for power MOSFET width of DC-DC converters
作者: Chen, K.-H.
Chien, C.-C.
Hsu, C.-H.
Huang, L.-R.
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-二月-2007
摘要: An optimum power metal-oxide-semiconductor field effect transistor (MOSFET) width technique is proposed for enhancing the efficiency characteristics of switching DC-DC converters. By implementing a one-cycle buck DC-DC converter, it is demonstrated that the dynamic power MOSFET width controlling technique has a much improved power reduction whether the load current is light or heavy. The maximum efficiency of the buck converter is similar to 92% with a 3% efficiency improvement for the heavy load condition. The efficiency is further improved by similar to 16% for the light load condition as a result of the power reduction from the large power MOSFET transistors. Also proposed is a new error-correction loop circuit to enable a better load regulation than that of previous designs. Compared with the adaptive gate driver voltage technique, the optimum power MOSFET width can achieve a significant improvement in power saving. It is also superior to the low-voltage-swing MOSFET gate drive technique for switching DC-DC converters.
URI: http://dx.doi.org/10.1049/iet-cds:20050331
http://hdl.handle.net/11536/11193
ISSN: 1751-858X
DOI: 10.1049/iet-cds:20050331
期刊: IET CIRCUITS DEVICES & SYSTEMS
Volume: 1
Issue: 1
起始頁: 57
結束頁: 62
顯示於類別:期刊論文


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