Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Y. C. | en_US |
dc.contributor.author | Yamaguchi, H. | en_US |
dc.contributor.author | Chang, E. Y. | en_US |
dc.contributor.author | Hsieh, Y. C. | en_US |
dc.contributor.author | Ueki, M. | en_US |
dc.contributor.author | Hirayama, Y. | en_US |
dc.contributor.author | Chang, C. Y. | en_US |
dc.date.accessioned | 2014-12-08T15:14:57Z | - |
dc.date.available | 2014-12-08T15:14:57Z | - |
dc.date.issued | 2007-01-08 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2431567 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11236 | - |
dc.description.abstract | The growth of the AlGaSb/InAs high-electron-mobility transistor (HEMT ) epitaxial structure on the Si substrate is investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown AlGaSb/AlSb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the AlGaSb/InAs HEMT structure and the Si substrate. The crystalline quality of the structure grown was examined by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Finally, very high room-temperature electron mobility of 27 300 cm(2) /V s was achieved. It is demonstrated that a very-high-mobility AlGaSb/InAs HEMT structure on the Si substrate can be achieved with the properly designed buffer layers. (c) 2007 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2431567 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 90 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000243582000087 | - |
dc.citation.woscount | 10 | - |
Appears in Collections: | Articles |
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