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dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorYamaguchi, H.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorHsieh, Y. C.en_US
dc.contributor.authorUeki, M.en_US
dc.contributor.authorHirayama, Y.en_US
dc.contributor.authorChang, C. Y.en_US
dc.date.accessioned2014-12-08T15:14:57Z-
dc.date.available2014-12-08T15:14:57Z-
dc.date.issued2007-01-08en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2431567en_US
dc.identifier.urihttp://hdl.handle.net/11536/11236-
dc.description.abstractThe growth of the AlGaSb/InAs high-electron-mobility transistor (HEMT ) epitaxial structure on the Si substrate is investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown AlGaSb/AlSb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the AlGaSb/InAs HEMT structure and the Si substrate. The crystalline quality of the structure grown was examined by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Finally, very high room-temperature electron mobility of 27 300 cm(2) /V s was achieved. It is demonstrated that a very-high-mobility AlGaSb/InAs HEMT structure on the Si substrate can be achieved with the properly designed buffer layers. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleGrowth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2431567en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000243582000087-
dc.citation.woscount10-
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