標題: | The integration of Ge and III-V materials on GaAs and Si for Post CMOS applications |
作者: | Chang, Edward Yi Chang, Chia Hua Tang, Shih Hsuan Hai Dang Trinh Kuo, Chien I. Hsu, Ching Yi Su, Yung Hsuan 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2012 |
摘要: | In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. And the growth of high quality Ge film on GaAs is demonstrated using ultra high vacuum chemical vapor deposition (UHVCVD). Both Ge film grown on GaAs and InAs film grown on Si substrate demonstrate high crystallinity and good surface morphology as observed by XRD and AFM. Furthermore, the fabrication process and electric characteristics of Ge/GaAs and InAs/Si is discussed in the study. The developed epitaxial materials systems and device fabrication including InAs on Si, Ge on GaAs are useful for future III-V and Ge integration on Si substrate for next generation high speed low power CMOS as well as for RF/digital mixed signal circuit applications in the future. |
URI: | http://hdl.handle.net/11536/23149 http://dx.doi.org/10.1149/1.3694389 |
ISBN: | 978-1-60768-318-6 |
ISSN: | 1938-5862 |
DOI: | 10.1149/1.3694389 |
期刊: | CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012) |
Volume: | 44 |
Issue: | 1 |
起始頁: | 715 |
結束頁: | 720 |
顯示於類別: | 會議論文 |