完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Chih-Yang | en_US |
dc.contributor.author | Lee, Jam-Wem | en_US |
dc.contributor.author | Ma, Ming-Wen | en_US |
dc.contributor.author | Chen, Wei-Cheng | en_US |
dc.contributor.author | Lin, Hsiao-Yi | en_US |
dc.contributor.author | Yeh, Kuan-Lin | en_US |
dc.contributor.author | Wang, Shen-De | en_US |
dc.contributor.author | Lei, Tan-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:15:06Z | - |
dc.date.available | 2014-12-08T15:15:06Z | - |
dc.date.issued | 2007 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11337 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.2742810 | en_US |
dc.description.abstract | The degradation mechanisms of both negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) were studied for low-temperature polycrystalline silicon complementary thin-film transistors. Measurements show that both NBTI and PBTI are highly bias dependent; however, the effect of the temperature is only functional on the NBTI stress. Furthermore, instead of interfacial trap-state generation during the NBTI stress, the PBTI stress passivates the interface trap states. We conclude that the diffusion-controlled electrochemical reactions dominate the NBTI degradation while charge trapping in the gate dielectric controls the PBTI degradation. (c) 2007 The Electrochemical Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Bias temperature instabilities for low-temperature polycrystalline silicon complementary thin-film transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.2742810 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 154 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | H704 | en_US |
dc.citation.epage | H707 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000247572100068 | - |
dc.citation.woscount | 10 | - |
顯示於類別: | 期刊論文 |