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dc.contributor.authorCheng, Huang-Chungen_US
dc.contributor.authorTsai, Chun-Chienen_US
dc.contributor.authorLu, Jian-Haoen_US
dc.contributor.authorChen, Hsu-Hsinen_US
dc.contributor.authorChen, Bo-Tingen_US
dc.contributor.authorChang, Ting-Kuoen_US
dc.contributor.authorLin, Ching-Weien_US
dc.date.accessioned2014-12-08T15:15:06Z-
dc.date.available2014-12-08T15:15:06Z-
dc.date.issued2007en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/11341-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2382420en_US
dc.description.abstractLow-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) with a periodic lateral silicon grain structure have been demonstrated to exhibit high-performance electrical characteristics via the amorphous silicon spacers above the amorphous silicon film crystallized with excimer laser. Amorphous silicon spacers allowed the bottom of the under-layered amorphous silicon film to serve as seed crystals. The periodic grain structure could be artificially controlled via the super lateral growth phenomenon during excimer laser irradiation. Consequently, such periodically large and lateral grains in the TFTs would achieve high field-effect-mobility of 298 cm(2)/V s, as compared with the conventional ones of 128 cm(2)/V s. In addition, the uniformity of device-to-device could be improved due to this location-manipulated lateral silicon grains. (c) 2006 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titlePeriodically lateral silicon grains fabricated by excimer laser irradiation with a-Si spacers for LTPS TFTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2382420en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume154en_US
dc.citation.issue1en_US
dc.citation.spageJ5en_US
dc.citation.epageJ10en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000242538600073-
dc.citation.woscount8-
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