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dc.contributor.authorWu, YewChung Sermonen_US
dc.contributor.authorLiao, Chengen_US
dc.contributor.authorPeng, Wei Chihen_US
dc.date.accessioned2014-12-08T15:15:07Z-
dc.date.available2014-12-08T15:15:07Z-
dc.date.issued2007en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/11356-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2760320en_US
dc.description.abstractThree kinds of GaN light-emitting diodes (LEDs) were used to investigate the effect of the silver (Ag) mirror location on the performance of LEDs. Samples designated as "PR-LED" were LEDs with roughened p-GaN surface. "DRM-LED" and "DRSM-LED" were LEDs with double-roughened (p-GaN and undoped-GaN) surfaces and a Ag mirror system either at the undopedGaN/sapphire interface or on the back side of sapphire substrate. It was found that the light intensity of DRM-LED was 235.8 mcd, which was 3.05 times higher than that of the PR-LED, and 1.45 times higher than that of the DRSM-LED. (c) 2007 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleEffect of the silver mirror location on the luminance intensity of double-roughened GaN light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2760320en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume10en_US
dc.citation.issue10en_US
dc.citation.spageJ126en_US
dc.citation.epageJ128en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000248659800032-
dc.citation.woscount6-
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