Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

標題:	Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate
作者:	Peng, WC Wu, YS 材料科學與工程學系 Department of Materials Science and Engineering
公開日期:	1-五月-2006
摘要:	An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs. (c) 2006 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.2199613 http://hdl.handle.net/11536/12267
ISSN:	0003-6951
DOI:	10.1063/1.2199613
期刊:	APPLIED PHYSICS LETTERS
Volume:	88
Issue:	18
結束頁:
顯示於類別：	期刊論文

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