標題: | Effect of the silver mirror location on the luminance intensity of double-roughened GaN light-emitting diodes |
作者: | Wu, YewChung Sermon Liao, Cheng Peng, Wei Chih 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2007 |
摘要: | Three kinds of GaN light-emitting diodes (LEDs) were used to investigate the effect of the silver (Ag) mirror location on the performance of LEDs. Samples designated as "PR-LED" were LEDs with roughened p-GaN surface. "DRM-LED" and "DRSM-LED" were LEDs with double-roughened (p-GaN and undoped-GaN) surfaces and a Ag mirror system either at the undopedGaN/sapphire interface or on the back side of sapphire substrate. It was found that the light intensity of DRM-LED was 235.8 mcd, which was 3.05 times higher than that of the PR-LED, and 1.45 times higher than that of the DRSM-LED. (c) 2007 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/11356 http://dx.doi.org/10.1149/1.2760320 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.2760320 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 10 |
Issue: | 10 |
起始頁: | J126 |
結束頁: | J128 |
顯示於類別: | 期刊論文 |