標題: Effect of the silver mirror location on the luminance intensity of double-roughened GaN light-emitting diodes
作者: Wu, YewChung Sermon
Liao, Cheng
Peng, Wei Chih
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2007
摘要: Three kinds of GaN light-emitting diodes (LEDs) were used to investigate the effect of the silver (Ag) mirror location on the performance of LEDs. Samples designated as "PR-LED" were LEDs with roughened p-GaN surface. "DRM-LED" and "DRSM-LED" were LEDs with double-roughened (p-GaN and undoped-GaN) surfaces and a Ag mirror system either at the undopedGaN/sapphire interface or on the back side of sapphire substrate. It was found that the light intensity of DRM-LED was 235.8 mcd, which was 3.05 times higher than that of the PR-LED, and 1.45 times higher than that of the DRSM-LED. (c) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11356
http://dx.doi.org/10.1149/1.2760320
ISSN: 1099-0062
DOI: 10.1149/1.2760320
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 10
Issue: 10
起始頁: J126
結束頁: J128
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