Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

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DC 欄位	值	語言
dc.contributor.author	Peng, WC	en_US
dc.contributor.author	Wu, YS	en_US
dc.date.accessioned	2014-12-08T15:16:37Z	-
dc.date.available	2014-12-08T15:16:37Z	-
dc.date.issued	2006-05-01	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2199613	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12267	-
dc.description.abstract	An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs. (c) 2006 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2199613	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	88	en_US
dc.citation.issue	18	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000237321600017	-
dc.citation.woscount	30	-
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