標題: Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistors
作者: Wang, M. C.
Chang, T.-C.
Liu, Po-Tsun
Li, Y. Y.
Xiao, R. W.
Lin, L. F.
Chen, J. R.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 2007
摘要: The feasibility of using Cu/CuMg as a gate electrode for a-Si:H thin-film transistors (TFTs) has been investigated in this work. The issue of adhesion between the Cu film and glass substrates has been overcome by introducing the Cu/CuMg alloy. Furthermore, a wet-etching process of Cu-based gate metal has been proposed by using the copper etchant in the conventional printed circuit boards. The experimental result showed superior performance of a-Si:H TFT with desired electrode taper angle and minimal loss of critical dimension. The a-Si:H TFT exhibited mobility of 0.37 cm(2)/V s, subthreshold slope of 0.83 V/dec, and V(th) of 2.02 V.
URI: http://hdl.handle.net/11536/11360
http://dx.doi.org/10.1149/1.2739209
ISSN: 1099-0062
DOI: 10.1149/1.2739209
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 10
Issue: 8
起始頁: J83
結束頁: J85
顯示於類別:期刊論文