標題: | Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistors |
作者: | Wang, M. C. Chang, T.-C. Liu, Po-Tsun Li, Y. Y. Xiao, R. W. Lin, L. F. Chen, J. R. 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
公開日期: | 2007 |
摘要: | The feasibility of using Cu/CuMg as a gate electrode for a-Si:H thin-film transistors (TFTs) has been investigated in this work. The issue of adhesion between the Cu film and glass substrates has been overcome by introducing the Cu/CuMg alloy. Furthermore, a wet-etching process of Cu-based gate metal has been proposed by using the copper etchant in the conventional printed circuit boards. The experimental result showed superior performance of a-Si:H TFT with desired electrode taper angle and minimal loss of critical dimension. The a-Si:H TFT exhibited mobility of 0.37 cm(2)/V s, subthreshold slope of 0.83 V/dec, and V(th) of 2.02 V. |
URI: | http://hdl.handle.net/11536/11360 http://dx.doi.org/10.1149/1.2739209 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.2739209 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 10 |
Issue: | 8 |
起始頁: | J83 |
結束頁: | J85 |
顯示於類別: | 期刊論文 |